Photodetectors based on intersubband transitions using III-nitride superlattice structures.
نویسندگان
چکیده
We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using a directly modulated semiconductor laser and up to 13.3 GHz using an ultra-short pulse solid state laser.
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ورودعنوان ژورنال:
- Journal of physics. Condensed matter : an Institute of Physics journal
دوره 21 17 شماره
صفحات -
تاریخ انتشار 2009